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| Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.036D IR2127 CURRENT SENSING SINGLE CHANNEL DRIVER Features n Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune n Gate drive supply range from 10 to 20V n Undervoltage lockout n 5V Schmitt-triggered input logic n FAULT lead indicates shutdown has occured n Output in phase with input Product Summary VOFFSET IO+/VOUT VCSth ton/off (typ.) 600V max. 200 mA / 420 mA 10 - 20V 250 mV 150 & 100 ns Description The IR2127 is a high voltage, high speed power MOSFET and IGBT driver. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL outputs. The protection circuity detects over-current in the driven power transistor and terminates the gate drive voltage. An open drain FAULT signal is provided to indicate that an over-current shutdown has occurred. The output driver features a high pulse current buffer stage designed for minimum crossconduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side or low side configuration which operates up to 600 volts. Packages Typical Connection V CC IN FAULT VCC IN FAULT COM VB HO CS VS To Order CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-123 Previous Datasheet Index Next Data Sheet IR2127 Absolute Maximum Ratings Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to COM. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions. Symbol VB VS VHO VCC VIN VFLT VCS dVs/dt PD RJA TJ TS TL Parameter Definition High Side Floating Supply Voltage High Side Floating Offset Voltage High Side Floating Output Voltage Logic Supply Voltage Logic Input Voltage FAULT Output Voltage Current Sense Voltage Allowable Offset Supply Voltage Transient Package Power Dissipation @ TA +25C Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Lead Temperature (Soldering, 10 seconds) (8 Lead DIP) (8 Lead SOIC) (8 Lead DIP) (8 Lead SOIC) Value Min. -0.3 VB - 25 VS - 0.3 -0.3 -0.3 -0.3 VS - 0.3 -- -- -- -- -- -- -55 -- Max. 625 VB + 0.3 VB + 0.3 25 VCC + 0.3 VCC + 0.3 VB + 0.3 50 1.0 0.625 125 200 150 150 300 Units V V/ns W C/W C Recommended Operating Conditions The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the recommended conditions. The VS offset rating is tested with all supplies biased at 15V differential. Symbol VB VS VHO VCC VIN VFLT VCS TA Parameter Definition High Side Floating Supply Voltage High Side Floating Offset Voltage High Side Floating Output Voltage Logic Supply Voltage Logic Input Voltage FAULT Output Voltage Current Sense Signal Voltage Ambient Temperature Value Min. VS + 10 Note 1 VS 11.8 0 0 VS -40 Max. VS + 20 600 VB 20 VCC VCC VS + 5 125 Units V C Note 1: Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -VBS. B-124 CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL To Order Previous Datasheet Index Next Data Sheet IR2127 Dynamic Electrical Characteristics VBIAS (VCC, VBS) = 15V, CL = 1000 pF and TA = 25C unless otherwise specified. The dynamic electrical characteristics are measured using the test circuit shown in Figure 3. Symbol ton toff tr tf t bl t cs tflt Parameter Definition Turn-On Propagation Delay Turn-Off Propagation Delay Turn-On Rise Time Turn-Off Fall Time Start-Up Blanking Time CS Shutdown Propagation Delay CS to FAULT Pull-Up Propagation Delay Value Min. Typ. Max. Units Test Conditions -- -- -- -- 500 -- -- 150 100 80 40 750 240 340 200 150 120 60 900 360 510 ns VS = 0V VS = 600V Static Electrical Characteristics VBIAS (VCC, VBS) = 15V and TA = 25C unless otherwise specified. The VIN, VTH and IIN parameters are referenced to COM. The VO and IO parameters are referenced to VS . Symbol VIH VIL VCSTH+ VOH VOL I LK IQBS IQCC IIN+ IINICS+ I CSVBSUV+ VBSUVI O+ IO- Parameter Definition Logic "1" Input Voltage Logic "0" Input Voltage CS Input Positive Going Threshold High Level Output Voltage, VBIAS - VO Low Level Output Voltage, VO Offset Supply Leakage Current Quiescent VBS Supply Current Quiescent VCC Supply Current Logic "1" Input Bias Current Logic "0" Input Bias Current "High" CS Bias Current "High" CS Bias Current VBS Supply Undervoltage Positive Going Threshold VBS Supply Undervoltage Negative Going Threshold Output High Short Circuit Pulsed Current Output Low Short Circuit Pulsed Current Value Min. Typ. Max. Units Test Conditions 2.7 -- 180 -- -- -- -- -- -- -- -- -- 8.8 7.5 200 420 -- -- 250 -- -- -- 150 60 7.0 -- -- -- 10.3 9.0 250 500 -- 0.8 320 100 100 50 300 120 15 1.0 1.0 1.0 11.8 10.6 -- -- mA V A mV V VCC = 10V to 20V VCC = 10V to 20V VCC = 10V to 20V IO = 0A IO = 0A VB = VS = 600V VIN = 0V or 5V VIN = 0V or 5V VIN = 5V VIN = 0V VCS = 3V VCS = 0V VO = 0V, VIN = 5V PW 10 s VO = 15V, VIN = 0V PW 10 s To Order CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-125 Previous Datasheet Index Next Data Sheet IR2127 Functional Block Diagram VCC UV DETECT UP SHIFTERS IN PULSE GEN VB DELAY FAULT PULSE FILTER DOWN SHIFTER PULSE GEN Q R S + CS VS HV LEVEL SHIFT VB R R S Q BUFFER PULSE FILTER HO Q R S COM Lead Definitions Lead Symbol Description VCC IN FAULT COM VB HO VS CS Logic and gate drive supply Logic input for gate driver output (HO), in phase with HO Indicates over-current shutdown has occurred, negative logic Logic ground High side floating supply High side gate drive output High side floating supply return Current sense input to current sense comparator Lead Assignments 8 Lead DIP SO-8 IR2127 B-126 CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL IR2127S To Order Previous Datasheet Index Next Data Sheet IR2127 Device Information Process & Design Rule Transistor Count Die Size Die Outline HVDCMOS 4.0 m 206 77 X 85 X 26 (mil) Thickness of Gate Oxide Connections First Layer Second Layer Contact Hole Dimension Insulation Layer Passivation Method of Saw Method of Die Bond Wire Bond Leadframe Material Width Spacing Thickness Material Width Spacing Thickness Material Thickness Material Thickness Package Remarks: Method Material Material Die Area Lead Plating Types Materials 800A Poly Silicon 4 m 6 m 5000A Al - Si (Si: 1.0% 0.1%) 6 m 7 m 20,000A 8 m X 8 m PSG (SiO2) 1.5 m PSG (SiO2) 1.5 m Full Cut Ablebond 84 - 1 Thermo Sonic Au (1.0 mil / 1.3 mil) Cu Ag Pb : Sn (37 : 63) 8 Lead PDIP / SO-8 EME6300 / MP150 / MP190 To Order CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL B-127 Previous Datasheet Index Next Data Sheet IR2127 IN CS 50% 50% IN FAULT ton tr 90% toff 90% tf HO Figure 1. Input/Output Timing Diagram HO 10% 10% Figure 2. Switching Time Waveform Definition 50% IN tbl CS 90% VCSTH CS t cs HO 90% HO FAULT Figure 3. Start-up Blanking Time Waveform Definitions Figure 4. CS Shutdown Waveform Definitions VCSTH CS tflt FAULT 90% Figure 5. CS to FAULT Waveform Definitions B-128 CONTROL INTEGRATED CIRCUIT DESIGNERS MANUAL To Order |
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